METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to guarantee sufficient capacitance while obtaining an excellent electrical characteristic, by improving a deposition process for forming a Ta2O5 thin film used as a dielectric layer of the capacitor to make a thin film having a large dielectric constant and a stable structure. CONSTITUTION: A lower electrode(13) is formed on a substrate(11) having various elements for forming a semiconductor device. An amorphous (Ta2O5)1-x -(TiO2)x dielectric layer(15) is formed on the lower electrode. An upper electrode(16) is formed on the (Ta2O5)1-x -(TiO2)x dielectric layer.