| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent the delay of speed reading operation by ground noise. CONSTITUTION: The memory device includes a memory cell array, a plurality of sense amplifiers(12), a plurality of precharging circuits(14) and a plurality of sense amplifying drivers(20). The plurality of sense amplifiers amplify and output a data from the memory cell array in response to a sense amplifier enabling signal of the first state, The plurality of precharging circuits are connected to a pair of output lines of each of the plurality of sense amplifiers and precharge the pair of output lines in response to the sense amplifier enabling signal of the second state. The plurality of sense amplifying drivers generate a pair of output signals of the first state and a pair of complementary output signals by driving the pair of output signals from each of the plurality of sense amplifiers in response to the control signal of the first state.
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