| 摘要 |
PURPOSE: A method for manufacturing a gate of a semiconductor device is provided to simplify a manufacturing process by changing a gas atmosphere of a chamber from nitrogen to oxygen to form a tungsten nitride layer and oxidizing sacrificial polysilicon, and to reduce parasitic capacitance by using an oxide layer to protect the outside of a gate instead of a nitride layer. CONSTITUTION: A gate oxide layer(22), polysilicon(23), a nitrogen-containing tungsten layer(24), a cap insulating layer(25) and a cap oxide layer(26) are sequentially formed on a semiconductor substrate(21). The resultant structure is etched in a position where a gate is to be formed, until the gate oxide layer is exposed. A sacrificial polysilicon layer is formed on the entire surface of the resultant structure. A rapid thermal process is performed regarding the nitrogen-containing tungsten layer to form a tungsten nitride layer(28) on an interface between the polysilicon and the sacrificial polysilicon layer. The sacrificial polysilicon layer is oxidized to form an oxide layer(29).
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