METHOD FOR MANUFACTURING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to form a gate electrode of which a gate oxide layer is not damaged, without using a re-oxidation process. CONSTITUTION: A gate oxide layer(12), a barrier metal layer(13), a metal layer(14) and a hard mask layer(15) are sequentially stacked on a semiconductor substrate(11). The metal layer is etched by using the barrier metal layer as an intercepting layer and by using a hard mask layer. A dielectric layer(16) is deposited on the resultant structure to form a spacer. The dielectric layer and the barrier metal layer are etched to form a gate electrode. A heat treatment is performed in a nitrogen atmosphere regarding the barrier metal layer under the spacer. The barrier metal nitride layer formed as a result of the heat treatment is etched to complete a gate electrode.