发明名称 ELECTROPLATING METHOD, PLATING SOLUTION EVALUATING METHOD, PLATING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an electroplating method with which a plating film of sufficient quality is stably obtained over a long period without replacing a plating solution, a method for measuring the concentrations of additive components in the solution without using a troublesome technique to evaluate the solution and a plating device by which the solution in the operated plating device is evaluated. SOLUTION: The concentrations of the brightener, smoothing agent and inhibitor contained in the plating solution as the additives are respectively measured during electroplating, and the respective components are replenished, as required, to keep the concentrations of the respective components in a specified range to conduct electroplating. The concentrations of the additives in the solution are calculated by using a current-potential curve of the solution containing the additives to evaluate the solution. Meanwhile, a CV electrode to obtain the curve is arranged in the plating solution in the plating device to measure the concentrations of the additives in the solution in the device.
申请公布号 JP2001152398(A) 申请公布日期 2001.06.05
申请号 JP20000237548 申请日期 2000.08.04
申请人 FUJITSU LTD 发明人 KITADA HIDEKI;KAMIYOSHI GOJI;SHIMIZU NORIYOSHI
分类号 G01N33/00;C25D7/12;C25D21/12;C25D21/14;G01N27/48;H01L21/288;H01L21/3205;H01L23/52;H05K3/18;(IPC1-7):C25D21/14 主分类号 G01N33/00
代理机构 代理人
主权项
地址