| 发明名称 |
Laser annealing method and laser annealing device |
| 摘要 |
In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively.
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| 申请公布号 |
US6242291(B1) |
申请公布日期 |
2001.06.05 |
| 申请号 |
US19970987573 |
申请日期 |
1997.12.11 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KUSUMOTO NAOTO;YAMAZAKI SHUNPEI;TANAKA KOICHIRO |
| 分类号 |
H01L21/324;G01Q60/24;G01Q90/00;H01L21/00;H01L21/20;H01L21/268;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/324 |
| 代理机构 |
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