发明名称 |
SEMICONDUCTOR DEVICE HAVING ELECTROSTATIC DISCHARGE PREVENTION CIRCUIT |
摘要 |
PURPOSE: A semiconductor device having an electrostatic discharge prevention circuit is provided to protect the semiconductor device from an electrostatic discharge having a range broader than that of a conventional semiconductor device. CONSTITUTION: An external signal is applied to a signal input pad(111). A supply voltage line(121) transmits a supply voltage of a semiconductor device. A ground voltage line(131) transmits a ground voltage of the semiconductor device. The first Schottky diode(243) is connected between the signal input pad and the ground voltage line to discharge a negative electrostatic discharge inputted from the exterior so that the semiconductor device is prevented from being damaged by the electrostatic discharge.
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申请公布号 |
KR20010045565(A) |
申请公布日期 |
2001.06.05 |
申请号 |
KR19990048896 |
申请日期 |
1999.11.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SANG MUN |
分类号 |
H01L23/60;(IPC1-7):H01L23/60 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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