发明名称 SEMICONDUCTOR DEVICE HAVING ELECTROSTATIC DISCHARGE PREVENTION CIRCUIT
摘要 PURPOSE: A semiconductor device having an electrostatic discharge prevention circuit is provided to protect the semiconductor device from an electrostatic discharge having a range broader than that of a conventional semiconductor device. CONSTITUTION: An external signal is applied to a signal input pad(111). A supply voltage line(121) transmits a supply voltage of a semiconductor device. A ground voltage line(131) transmits a ground voltage of the semiconductor device. The first Schottky diode(243) is connected between the signal input pad and the ground voltage line to discharge a negative electrostatic discharge inputted from the exterior so that the semiconductor device is prevented from being damaged by the electrostatic discharge.
申请公布号 KR20010045565(A) 申请公布日期 2001.06.05
申请号 KR19990048896 申请日期 1999.11.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SANG MUN
分类号 H01L23/60;(IPC1-7):H01L23/60 主分类号 H01L23/60
代理机构 代理人
主权项
地址