发明名称 |
ELECTRON CYCLOTRON RESONANCE ASHING APPARATUS FOR PROCESSING GLASS SUBSTRATE OR WAFER |
摘要 |
PURPOSE: An electron cyclotron resonance(ECR) ashing apparatus for processing a glass substrate or wafer is provided to perform a dry ashing process of high efficiency, by fixing the glass substrate of a large area or wafer and by driving a plurality of small ECR sources back and forth or right and left, and by disposing the small ECR sources and driving the glass substrate of a large area or wafer back and forth or right and left. CONSTITUTION: An induction hole for an object, an ashing gas exhausting hole and a gas supplying unit(115) are formed in an ashing chamber(100). The object applied with photoresist(111) is settled in a lower electrode(117) of the ashing chamber. A radio frequency(RF) power is applied to the lower electrode. An electron cyclotron resonance(ECR) source(123) forms plasma in the ashing chamber, composed of a microwave generating unit, a waveguide, a plasma discharging chamber and a magnetic coil. A power supplying apparatus(121) applies power to the ECR source. A scan apparatus(125) drives the ECR source to move back and forth or right and left.
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申请公布号 |
KR20010044059(A) |
申请公布日期 |
2001.06.05 |
申请号 |
KR20000036461 |
申请日期 |
2000.06.29 |
申请人 |
DISPLAY MANUFACTURING SERVICE CO., LTD. |
发明人 |
BAE, U GYEONG;PARK, YONG SEOK |
分类号 |
G03F7/42;G02F1/13;H01L21/00;H01L21/027;H01L21/30;H01L21/302;H01L21/304;H01L21/3065;H01L21/84;(IPC1-7):H01L21/304 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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