| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a new styrene derivative having a styrene skeleton useful as a monomer for producing a base polymer for a chemically amplified resist material suitable for a mier of abrication technique. SOLUTION: This styrene derivative is represented by the general formula (1) (wherein R1 is H, a 1-20C linear, branched or cyclic alkyl, an F-substituted alkyl, Cl atom or trichloromethyl; R2 is a protecting group of phenol; and (p), (q), (r) are each 0 or a natural number of 0<=p<5, 0<=q<5, 0<r<5 and satisfy 0<p+q<5. A resist material prepared by using a polymer obtained by polymerizing the styrene derivative is sensitive to high energy beam and excellent in sensitivity, resolution and plasma etching resistance at <=200 nm especially <=170 nm wave length. The compound can be a suitable raw material for a base polymer of a resist material having small absorption at an exposure wavelength of F2 excimer laser. The resist material using the compound can easily form a fine pattern vertical to the substrate and is suitable for a fine pattern producing material for producing a very-large-scale integration system (VLSI).</p> |
