发明名称 |
Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same |
摘要 |
A magneto-resistive memory cell and a method of forming the memory cell, includes a substrate, a single crystalline semiconductor diode formed in the substrate; and a first thin film conductor recessed in the substrate, and a second thin film conductor form above a magnetic tunnel junction formed on the diode. The diode and first thin film conductor share a non-planar common surface, such that the metal tunnel junction is a predetermined distance from the thin film conductor.
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申请公布号 |
US6242770(B1) |
申请公布日期 |
2001.06.05 |
申请号 |
US19980144067 |
申请日期 |
1998.08.31 |
申请人 |
BRONNER GARY BELA;GATES STEPHEN MCCONNELL;SCHEUERLEIN ROY EDWIN |
发明人 |
BRONNER GARY BELA;GATES STEPHEN MCCONNELL;SCHEUERLEIN ROY EDWIN |
分类号 |
H01L21/8246;H01L27/22;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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