| 摘要 |
PURPOSE: A method for manufacturing an interconnection of a semiconductor device is provided to improve a reflow characteristic, by using an oxidation/deoxidation characteristic of a copper thin film to form a defect on the surface of the copper thin film. CONSTITUTION: An insulating layer(22) is deposited on a semiconductor substrate(21) having a device. The insulating layer is etched to expose a specific portion of the device by a photolithography process and to form a contact hole. A barrier layer(23) is deposited on the resultant structure. A copper thin film(24) is deposited on the barrier layer by a physical vapor deposition(PVD) method. A heat treatment is performed regarding the copper thin film in an oxygen atmosphere and reflowed. A copper oxide layer is formed on the copper thin film reacting with the oxygen. A heat treatment is performed regarding the copper thin film and the copper oxide layer in a hydrogen atmosphere. The copper thin film and the copper oxide layer are reflowed to make the hydrogen react with the copper oxide layer and to be deoxidized to copper. The processes from when the barrier layer is deposited and until the copper thin film and the copper oxide layer are deoxidized, are repeated until the contact hole is filled with the copper thin film and the copper thin film is deposited to a desired height.
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