METHOD FOR MANUFACTURING CAPACITOR WHEREIN DEFECT IS CONTROLLED BY SUBSEQUENT HEAT TREATMENT PROCESS

摘要

PURPOSE: A method for manufacturing a capacitor wherein a defect is controlled by a subsequent heat treatment process is provided to prevent a dielectric layer from being deteriorated by thermal budget in a subsequent process, by making the thermal budget applied to the capacitor before an upper electrode is formed. CONSTITUTION: A metal or conductive metallic compound is deposited to form a lower electrode. A metal oxide-based dielectric material or dielectric material having a perovskite structure is deposited on the lower electrode at a temperature lower than its crystallization temperature to form an amorphous or nano-crystalline dielectric layer. A metal or conductive metallic compound is deposited on the dielectric layer to form an upper electrode. A conductive material or a dielectric material different from the dielectric material constituting the dielectric layer have a crystallization temperature higher than that of the dielectric material constituting the dielectric layer. The conductive material or dielectric material is deposited at a temperature lower than its crystallization temperature to form an amorphous or nano-crystalline defect prevention layer before, after or before/after the dielectric layer is formed. A heat treatment process is performed at a temperature scope lower than the defect prevention layer is crystallized and higher than the dielectric layer is formed before, after and before/after the dielectric layer or defect prevention layer is formed.