| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to form a lower electrode by a simple process and to increase charge storage capacitor, by forming an etch barrier layer on an insulating layer for forming a contact plug, and by simultaneously forming the contact plug and a contact for the lower electrode. CONSTITUTION: The first interlayer dielectric and an etch barrier layer are formed on a semiconductor substrate having a lower structure. The etch barrier layer is removed to expose the upper portion of the first interlayer dielectric in a portion for a contact plug. The second interlayer dielectric and an anti-reflecting layer(ARL) are sequentially formed on the entire structure, and the second photoresist pattern is formed to define a lower electrode of a capacitor. The ARL and the second interlayer dielectric are etched by exposure and etch processes using the second photoresist pattern, to form a contact for the lower electrode and to expose the etch barrier layer. The first interlayer dielectric is etched to form a contact plug by an etch process using the exposed etch barrier layer as a mask. A polysilicon layer is formed on the entire structure to bury the contact plug and the contact for the lower electrode. A polishing process is performed to expose the upper portion of the second photoresist pattern. The second photoresist pattern, the ARL and the second interlayer dielectric which are exposed by the polishing process, are eliminated to form the lower electrode of the capacitor.
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