| 摘要 |
A semiconductor wafer includes a silicon substrate, at least two floating gates positioned on the silicon substrate and a silicon nitride layer positioned on the surface of each floating gate. The method first uses a lithographic process and an ion implantation process to form a drain in the silicon substrate between the two floating gates. A passivation layer is then formed uniformly on the surface of the silicon substrate and the top surface and the sides of the floating gate. An etching process is performed later to form a spacer around each floating gate, the spacers between the floating gate are joined and cover the drain. Finally, an ion implantation process is performed, using the spacers as a hard mask, to form a source in the silicon substrate.
|
