| 摘要 |
PURPOSE: A method for manufacturing a wafer protection ring having improved tolerance regarding a thermal shock is provided to prevent the wafer protection ring from being transformed by a rapid temperature change or to prevent the wafer protection ring from being broken down by thermal fatigue, by installing a silicon oxide layer having strong tolerance on the surface of the wafer protection ring. CONSTITUTION: A ceramic ring is composed of a mixture of SiC and Si3N4 or only SiC. The surface of the ceramic ring is polished in a circumferential direction. The ceramic ring is sintered within a temperature scope from 1350 deg.C to 1450 deg.C and in an oxygen atmosphere so that a silicon oxide layer is formed on the surface of the ceramic ring. The ceramic ring is cooled down to 500 deg.C and to a room temperature.
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