| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a pure tungsten word line, by etching a barrier conductive layer by gas having etch selectivity regarding a gate insulating layer and guaranteeing an etch rate. CONSTITUTION: A gate insulating layer(12), a barrier conductive layer, a conductive layer and a hard mask layer(15) are formed on a substrate(11) in a process for forming a word line. The hard mask layer and the conductive layer are selectively etched to be left only on a portion for the word line. The barrier conductive layer is etched by using the hard mask layer and the conductive layer as a mask, wherein gas having etching selectivity regarding the gate insulating layer is used.
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