发明名称 METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to increase integration of a pattern and to reduce a bridge between adjacent contact holes, by performing a baking process at a high temperature regarding a contact hole formed through a mask pattern to form a circular contact hole. CONSTITUTION: A mask pattern is formed on a semiconductor substrate having a layer where a predetermined pattern is formed. An exposure process is performed regarding the mask pattern to form a contact hole. A baking process is performed at a high temperature regarding the semiconductor substrate having the contact hole to form a circular contact hole.
申请公布号 KR20010045198(A) 申请公布日期 2001.06.05
申请号 KR19990048403 申请日期 1999.11.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, YEONG SU;SONG, JEONG HO
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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