发明名称 |
METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to increase integration of a pattern and to reduce a bridge between adjacent contact holes, by performing a baking process at a high temperature regarding a contact hole formed through a mask pattern to form a circular contact hole. CONSTITUTION: A mask pattern is formed on a semiconductor substrate having a layer where a predetermined pattern is formed. An exposure process is performed regarding the mask pattern to form a contact hole. A baking process is performed at a high temperature regarding the semiconductor substrate having the contact hole to form a circular contact hole.
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申请公布号 |
KR20010045198(A) |
申请公布日期 |
2001.06.05 |
申请号 |
KR19990048403 |
申请日期 |
1999.11.03 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK, YEONG SU;SONG, JEONG HO |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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