| 摘要 |
PURPOSE: A method for manufacturing a metal contact of a semiconductor device is provided to improve a characteristic of the device by increasing the area of a metal contact in contact with a lower interconnection layer to minimize contact resistance, and to reduce contact resistance in the metal contact by forming a conductive sidewall to make a main interconnection material not exposed to the side surface of the interconnection layer. CONSTITUTION: A lower interconnection layer(35a) is formed on a substrate(31). A conductive sidewall(40a) is formed on both side surfaces of the lower interconnection layer. An insulating layer is formed on the entire surface including the conductive sidewall. The insulating layer is eliminated to expose a part of the conductive sidewall formed on both sides of the lower interconnection and the lower interconnection layer and to form a metal contact(43).
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