Anodized aluminum susceptor for forming integrated circuit structures and method of making anodized aluminum susceptor

摘要

Disclosed is a method of making an anodized aluminum susceptor capable of withstanding an elevated temperature of 590° C., or a temperature as high as 475° C. in the presence of an NF3 plasma, without peeling or cracking, which preferably comprises selecting a high purity or low magnesium aluminum alloy, roughening the surface of the alloy, and then anodizing the surface roughened alloy in an electrolyte comprising an organic acid to form the desired anodized aluminum oxide coating thereon. Further, the invention comprises a high purity or low magnesium aluminum alloy susceptor and an organic acid anodic coating thereon highly resistant to spalling or cracking at elevated temperatures.