| 摘要 |
PURPOSE: A method for manufacturing a gate spacer of a semiconductor device is provided to prevent a junction leakage current and resistance regarding a junction area from being increased, by preventing damage to the surface of a substrate in a process for forming a spacer playing an important role in a self-aligned contact process. CONSTITUTION: A gate oxide layer(104) and a gate electrode(106), which are patterned as a self-aligned type, are formed on an active region of a semiconductor substrate(100). Photoresist is applied on the entire structure having the gate electrode. A photolithography process is performed by using a reticle defining a predetermined portion of the upper part of the gate electrode and a source/drain region(112). The photoresist in a portion except the upper part and side surface part of the gate electrode is eliminated to form a photoresist pattern. Impurity ions are implanted into the substrate to form the source/drain region. An interlayer dielectric(114) of an oxide material is formed on the side surface of the photoresist pattern and on the surface of the substrate by a selective liquid phase deposition method. Only the photoresist pattern of the resultant structure is selectively eliminated. An insulating material having etching selectively different from that of the oxide material is buried in a peripheral space of the gate electrode where the photoresist pattern is eliminated. The insulating material is polished until the surface of the interlayer dielectric is exposed, to form a spacer(116') surrounding the peripheral portion of the gate electrode.
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