THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor is provided to prevent a characteristic of a channel layer from being degraded by an etch process, by forming an ohmic contact layer of a spacer type on the sidewalls of source and drain electrodes, and by disposing a channel layer between the source and drain electrodes including the ohmic contact layer. CONSTITUTION: A source electrode(12a) and a drain electrode(12b) are formed on a transparent insulating substrate(11), separated from each other. Ohmic contact layers(13a) of a spacer type are formed on the sidewalls of the source and drain electrodes, respectively. A channel layer(14a) is formed on the transparent insulating substrate between the ohmic contact layers. A gate insulating layer(15) is formed on the resultant structure. A gate is formed on the gate insulating layer portion formed on the channel layer.