| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to easily control a gate profile and a critical dimension, by omitting an etch process for forming a cobalt silicide layer, and by using an etch process of polysilicon to form a cobalt silicide gate. CONSTITUTION: The first gate electrode(23) is formed in a predetermined region of a semiconductor substrate(21) by interposing a gate insulating layer. A sidewall spacer(24) is formed on both side surfaces of the first gate electrode. A source/drain impurity diffusion region(25) is formed in the surface of the semiconductor substrate at both sides of the first gate electrode. An insulating layer is formed on the entire surface of the semiconductor substrate including the first gate electrode. The insulating layer is planarized to expose the upper surface of the first gate electrode. A predetermined thickness of the exposed first gate electrode is removed. The second gate electrode(27) composed of high melting silicide is formed on the surface of the first gate electrode. A gate cap insulating layer(28) is formed on the surface of the second gate electrode.
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