ETCHING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: An etching method for manufacturing a semiconductor device is provided to improve a profile of a pattern, by efficiently eliminating the polymer generated in a process for etching an oxynitride layer. CONSTITUTION: An oxide layer(12), a poly layer and an oxynitride layer(16) are sequentially formed on a semiconductor substrate(10) to form a thin film structure. The thin film structure is etched by an in-situ method. After the oxynitride layer is etched, polymer is eliminated by using mixture gas of helium and oxygen before the poly layer is etched.