| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to form dopants in a channel region without deteriorating a gate electrode and a gate oxide layer, performing an ion implantation process after the gate electrode is formed and a spacer oxide layer is deposited. CONSTITUTION: An ion implantation process is performed regarding a semiconductor substrate(11) having an isolating layer(12) and a well(13) to control a threshold voltage. A gate electrode(16) is formed on the semiconductor substrate, and a lightly-doped-drain(LDD) oxide layer(17) is formed on both sides of the gate electrode and on the well and the isolating layer. After a spacer oxide layer(18) is formed on the entire upper surface including the gate electrode, a tilt-ion implantation process is carried out. A nitride layer spacer is formed on both sides of the gate electrode.
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