SILICON WAFER FOR EPITAXIALLY GROWING, EPITAXIAL WAFER AND METHOD OF PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer for epitaxially growing, with which the formation of SF is suppressed, an epitaxial wafer and a method of producing the same. SOLUTION: The silicon wafer for epitaxially growing has a surface for growing an epitaxial layer, which surface is free from exposed void defects. The method of producing the epitaxial wafer comprises measuring the number of void defects exposed to the surface of a silicon wafer and/or the number of void defects present in a region from the surface to the depth of 10 nm of the silicon wafer, then selecting a wafer in which the number of the void defects is not more than a prescribed value and growing the epitaxial layer on the surface of the selected wafer. Furthermore, the method of producing the epitaxial wafer comprises heat treating the wafer having void defects exposed to the surface of the silicon wafer and/or void defects present in the region from the surface to the depth of 10 nm of the silicon wafer so that the void defects are eliminated and/or the void defects are each converted into a form not causing a generation source of SF, and growing the epitaxial layer on the surface of thus heat treated wafer.