发明名称 |
Clamp circuit using PMOS-transistors with a weak temperature dependency |
摘要 |
A clamp circuit is provided wherein the clamp device is a PMOS transistor. This clamp circuit is particularly suited for applications requiring weak temperature dependency of a reference voltage. In some embodiments, some temperature dependency is tolerated in exchange for improved clamp characteristics (realized, for example, by operating the PMOS clamp transistor in the high current region).
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申请公布号 |
US6242972(B1) |
申请公布日期 |
2001.06.05 |
申请号 |
US19990428291 |
申请日期 |
1999.10.27 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
FATEMIZADEH BADREDIN |
分类号 |
G11C5/14;(IPC1-7):G05F1/10 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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