| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to precisely etch a polysilicon layer thickly formed to guarantee capacitance of the capacitor, by forming a hard mask by using alumina. CONSTITUTION: A polysilicon layer(2) for a lower electrode of a capacitor is formed on a substrate(1) having a lower pattern. Alumina(5) for a hard mask is formed on the polysilicon layer. A photoresist layer pattern(4) exposing a predetermined part of the alumina is formed on the alumina. The exposed alumina is etched to form the hard mask exposing a part of the polysilicon layer. The exposed portion of the polysilicon layer is etched to form the lower electrode of the capacitor by using the photoresist layer pattern and the hard mask as an etching barrier. the remaining hard mask is eliminated.
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