METHOD FOR MANUFACTURING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to transform a void of a circular shape into a void of a silt shape and to prevent the void from growing. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). An alloy layer in which solute metal having an affinity for nitrogen is mixed with solute metal having a relatively low affinity for nitrogen, is formed on the interlayer dielectric. A heat treatment is performed in a nitrogen atmosphere regarding the semiconductor substrate to form a plurality of metal nitride deposits having a size smaller than nanometer inside the alloy layer. The alloy layer having the metal nitride deposits is selectively removed to form a metal interconnection(26).