BONDING METHOD OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a bonding method of a silicon wafer capable of inhibiting the production of voids on a bonding surface, and free from the separation or the like at a bonding interface in bonding silicon bases to each other. SOLUTION: In bonding first silicon base 1 provided with a circuit element 3 to a second silicon base 11 as a seating in a superposed state, an anti-diffusion layer 4 for preventing the diffusion of Au is formed on a first silicon base 1, an Au layer 5 is formed on the anti-diffusion layer 4, an anti-diffusion layer 13 for preventing the diffusion of Au is formed on a second silicon base, an Au layer 14 is formed on the anti-diffusion layer 13, and the Au layers 5, 14 of the first and second bases 1, 11 are overlapped to each other, and bonded to each other by the application of predetermined load and temperature. Each anti-diffusion layer is formed by a metallic thin film such as Ti, Ni, Cr, W, Al or the like, a silicon oxide film, a silicon nitride film or a glass thin film.