| 摘要 |
PURPOSE: A method for manufacturing a metal interconnection of a semiconductor device is provided to reduce contact resistance of an upper metal interconnection and a lower metal interconnection, by forming a barrier metal sidewall on a side surface of the lower metal interconnection so that a step is mot formed on the side surface. CONSTITUTION: An insulating layer(2) is deposited on a substrate(1) having a semiconductor device. A lower metal interconnection including a metal layer(4) where a barrier metal layer(3) connected to a specific region of the semiconductor device is located in upper and lower portions of the metal layer, through a contact hole formed in the insulating layer. The barrier metal layer is dry-etched to form a barrier metal sidewall(7) on a side surface of the lower metal interconnection.
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