| 摘要 |
PURPOSE: A method for manufacturing an intermetal dielectric is provided to prevent signal process time from being delayed and to prevent a chip from being damaged, by implanting low density phosphorous ions into a spin-on-glass(SOG) layer applied near a metal interconnection. CONSTITUTION: An insulating layer(2), a metal layer(3) and a Ti/TiN layer(4) are sequentially formed on the entire substrate(1) having a device. The metal layer and the Ti/TiN layer are patterned to form a metal interconnection. A spin-on-glass(SOG) layer(6) is thickly applied on the entire surface of the resultant structure. Low-density phosphorous ions are implanted into the SOG layer applied near the metal interconnection by using plasma. The resultant structure is etched back to expose the Ti/TiN layer on the metal interconnection so that only the SOG layer into which the low-density phosphorous ions are implanted is left. A plasma-enhanced tetra-ethyl-ortho-silicate(PETEOS) oxide layer(5) is deposited.
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