| 摘要 |
PURPOSE: A method for manufacturing a mask is provided to minimize a distortion difference between masks by controlling an area of an auxiliary pattern according to variation of the area of a main pattern while using the area of the auxiliary pattern determined by predicted stress. CONSTITUTION: A membrane layer(40) is formed on upper and lower surfaces of a silicon substrate. An absorbing material is formed in an upper portion of the upper membrane layer. A photoresist layer is applied on the absorbing material, and a pattern is formed by performing an exposure and development process. The absorbing material is dry-etched by using the pattern. The lower membrane layer and the silicon substrate are etched back. An area of an auxiliary pattern(20) is determined depending on computation of predicted stress. The area of the auxiliary pattern varies according to variation of the area of a main pattern(10), to maintain a constant combined area of the main pattern and the auxiliary pattern.
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