发明名称 FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of simultaneously depositing films both on the front and back sides of an dielectric substrate. SOLUTION: A substrate is arranged inside a cylinder of a cylindrical electrode 14 so as to direct front and back sides of the substrate S toward an opening part 14a of the cylindrical electrode 14, a RF bias voltage or a pulse bias voltage is applied, thus, applying of a bias voltage to an insulative substrate S is made possible. Further, both the front and back sides of the substrate S is arranged so as to direct toward an opening part 14a of the cylindrical electrode 14, ECR plasma P is guided to both front/back faces of the substrate S, a protective film is simultaneously deposited on both the front and back sides of the substrate S.
申请公布号 JP2001152348(A) 申请公布日期 2001.06.05
申请号 JP19990337401 申请日期 1999.11.29
申请人 SHIMADZU CORP 发明人 TAKAMI YOSHIO;KUJI TOMOKO
分类号 G11B5/85;C23C16/27;C23C16/511;C23C16/515;(IPC1-7):C23C16/511 主分类号 G11B5/85
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