发明名称 CMOS active pixel sensor using native transistors
摘要 An active pixel sensor including low threshold voltage transistors advantageously provides an increased output swing over an active pixel sensor of the prior art. The low threshold voltage transistor can be achieved using either a native transistor or a depletion mode transistor. In a process in which a threshold adjustment implant step is separately masked, the active pixel sensor of the present invention can be manufactured with no additional masking requirements. In one embodiment, a low threshold voltage (VTN) allows a transistor acting as a reset switch to operate in the linear region, and allowing the reset switch transistor to share a common supply voltage source with a readout amplifier transistor.
申请公布号 US6242728(B1) 申请公布日期 2001.06.05
申请号 US19980137664 申请日期 1998.08.20
申请人 FOVEON, INC. 发明人 MERRILL RICHARD B.;LEE TSUNG-WEN
分类号 H04N3/15;(IPC1-7):H01L27/00 主分类号 H04N3/15
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