| 摘要 |
PURPOSE: An exposure mask pattern is provided to improve the degree of integration of a memory cell by forming an assistant pattern additionally in order that the exposure mask pattern in correspondence to a dummy cell portion uses the effect of interference of light. CONSTITUTION: The exposure mask pattern includes a light interference field(32), the first floodlight field(310) and the second floodlight field. The light interference field(32) is sheltered with the material such as chrome on a board made of the transparent material such as quartz or glass. The first floodlight field(310) and the second floodlight, by which light passes, in the center of the pattern are formed. In the first floodlight field(310), the contact part formed in the normal inner memory cells is defined. The second floodlight field is located around the first floodlight field(310) for generating the effect of reinforcing and interfering light and has the slit type and decides numbers of forming. |
