| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process by making a field oxide layer automatically formed when an n-well region and a p-well region are defined, and to improve reliability by minimizing contamination of a substrate. CONSTITUTION: An insulating layer of a constant thickness is formed on a substrate(31). A predetermined portion of the insulating layer is eliminated to a predetermined depth, and impurity ions of the first conductivity type are implanted. Another predetermined portion of the insulating layer is removed to a predetermined depth, and impurity ions of the second conductivity type are implanted. Well regions of the first and second conductivity types are formed by an impurity diffusion process. Gate electrodes(36,36a) are formed in the well regions of the first and second conductivity types, respectively. A source/drain impurity region of the second conductivity type is formed in the substrate on both sides of the gate electrode formed in the well region of the first conductivity type. A source/drain impurity region of the first conductivity type is formed in the substrate on both sides of the gate electrode formed in the well region of the second conductivity type.
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