| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process and to improve a characteristic of the device, by obviating the necessity of a separate ion implantation process for obtaining a high threshold voltage. CONSTITUTION: A well region is formed in a predetermined region of a semiconductor substrate(21). An ion implantation process for controlling a normal threshold voltage is performed regarding the well region to form a gate electrode(23) in the well region. A lightly-doped-drain(LDD) region is formed in the surface of the semiconductor substrate on both sides of the gate electrode. Impurity ions for controlling a high threshold voltage are implanted to increase a threshold voltage of a device. A gate sidewall is formed on the side surface of the gate electrode, and high density impurity ions are implanted to form a source/drain region.
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