发明名称 BOAT CAP OF VERTICAL DIFFUSION FURNACE FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A boat cap of a vertical diffusion furnace for manufacturing a semiconductor device is to provide a uniform layer of an excellent quality regarding the entire surface of a wafer, by making reaction gas of a uniform quantity flow and maintaining a uniform distribution space of a temperature. CONSTITUTION: Vertical surfaces in parallel with a flat zone(42) of a wafer(40) are formed in a reaction pipe(10), upper and lower plates(32,34) of a boat(30) and a boat cap(50) so that reaction gas does not flow to the flat zone of the wafer intensively. Vertical surfaces in parallel with the flat zone of the wafer are formed in at least the inner surface of a heater so that a uniform temperature is used regarding the entire surface of the wafer.
申请公布号 KR20010045167(A) 申请公布日期 2001.06.05
申请号 KR19990048361 申请日期 1999.11.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, BYEONG DONG;KIM, MAN SU;SHIN, CHUNG HWAN
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
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