| 摘要 |
PURPOSE: A method for manufacturing a metal-oxide-semiconductor(MOS) transistor is provided to prevent a characteristic of the transistor from being deteriorated, by forming a high density source/drain separated from a gate electrode by a sidewall to control a short channel effect, by eliminating a dummy gate located between the high density source and drain, and by implanting impurity ions for controlling a threshold voltage only in a channel region. CONSTITUTION: A metal-oxide-semiconductor(MOS) transistor including a dummy gate is formed on a substrate(1). A source/drain region of the MOS transistor is grown by a single crystal method to form a high density source/drain(7,8) separated from the dummy gate by a gate sidewall. The dummy gate is eliminated to expose a channel region of the substrate. A buffer oxide layer(10) is deposited on the resultant structure. Impurity ions for controlling a threshold voltage are implanted into the channel region by an ion implantation process using the buffer oxide layer as an ion implantation buffer. The buffer oxide layer is eliminated. A gate oxide layer and a metal gate electrode are formed on the channel region.
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