发明名称 STRUCTURE FOR PREVENTING DAMAGE TO SEMICONDUCTOR CHIP
摘要 PURPOSE: A structure for preventing damage to a semiconductor chip is provided to improve yield and reliability, by forming a damage preventing pattern in an interface between the semiconductor chip and a sawing region. CONSTITUTION: A semiconductor chip(100A,100B) having a bonding pad is formed in a semiconductor substrate(110). A nitride layer(120) is located on the semiconductor chip having the bonding pad, isolating the semiconductor substrate from a passivation layer(130) and protecting the semiconductor substrate from external damage. The passivation layer and the nitride layer are eliminated to form a damage preventing pattern of a narrow groove type, wherein the damage preventing pattern surrounds the semiconductor chip and is located in an interface between the semiconductor chip and a sawing region.
申请公布号 KR20010045021(A) 申请公布日期 2001.06.05
申请号 KR19990048119 申请日期 1999.11.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YANG, DONG HEON
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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