| 摘要 |
PROBLEM TO BE SOLVED: To provide a good circuit pattern by preventing generation of variations in wiring film thickness in finishing of polishing and avoiding the reduction of the wiring sectional area caused by the lack of a wiring pattern. SOLUTION: In this polishing pad 1 provided with a pad body 2 having an upper layer member 3 to be pressed to and brought into contact with a semiconductor wafer W and a lower layer member 4 abutting on the upper layer member 3, and for rotationally polishing the semiconductor wafer W by dropping slurry onto the pad front surface 2a, many discharge holes 2b opening on the pad front surface 2a are provided on the pad body 2, many discharge passages 4a communicated with respective discharge holes 2b are provided, and respective discharge passages 4a are positioned below the upper layer member 3 and opened in the direction of the pad rotational surface. |
