| 摘要 |
A hetero-junctioned FET having as its conductive channel a highly mobile electron accumulated layer where electrons are one-dimensionally distributed. This FET is provided with first and second semiconductor layers which, formed on a semiconductor substrate, are different from each other in electron affinity and produce a semiconductor hetero junction, a source electrode and a drain electrode formed on either the first or second semiconductor layer, multiple fine damaged-area stripes formed near the interface of the hetero junction within the first semiconductor layer in the channel area between the source and drain electrodes, and a conductive channel of multiple fine electron accumulated-layer stripes generatred at the locations other than those facing the damaged areas near the interface of the hetero junction within the second semiconductor layer. In this FET, the damaged areas selectively formed at the locations other than those of the conductive channel areas between the source and drain electrodes eliminates, at the locations corresponding to the damaged areas, the electron accumulated layers generated due to a semiconductor hetero junction to function as a conductive channel. This enables a conductive channel to be divided into strips each 0.1 mum or less wide.
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