| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve process margin in forming a gate in cell and core/peripheral regions, and to prevent polysilicon from being left in the core/peripheral region when a polysilicon plug is formed. CONSTITUTION: A cell region and a core/peripheral region are defined in a semiconductor substrate. A gate insulating layer, a conductive layer, a metal silicide layer and a gate cap-insulating layer are sequentially formed on the substrate. The gate cap insulating layer, the metal silicide layer and the conductive layer formed in the cell region are selectively removed to form the first gate electrode. A source/drain impurity region is formed in the semiconductor substrate at both sides of the first gate electrode. The first sidewall spacer is formed at both side surfaces of the first gate electrode. A conductive plug having the same height as the gate cap-insulating layer is formed on the substrate. The gate cap insulating layer, the metal silicide layer and the conductive layer formed in the core/peripheral region are selectively removed to form the second gate electrode. Halo and LDD regions are formed in the substrate at both sides of the second gate electrode. The second sidewall spacer is formed at both side surfaces of the second gate electrode. A source/drain impurity diffusion region is formed in the substrate at both sides of the second gate electrode. The conductive plug in a region except the cell region is removed. An insulating layer is formed on the substrate.
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