| 摘要 |
PURPOSE: A method for manufacturing a word line of a semiconductor device is provided to improve reliability of the semiconductor device, by preventing a tungsten layer from being oxidized in a polysilicon oxidation process when the polysilicon layer and the tungsten layer are used as word line materials. CONSTITUTION: Word lines stacked with a polysilicon layer(12), a tungsten layer(13) and a hard mask layer are formed on a semiconductor substrate(11). An oxygen-permeating material layer is formed among the plurality of word lines. A material layer(22) which oxygen does not permeate is formed on the exposed sidewall of the word line including the tungsten layer. After the oxygen-permeating material layer is removed, a polysilicon oxidation process is performed.
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