| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simultaneously embody a logic device and an analog device and to prevent a latch-up characteristic in the logic device from being reduced, by using an asymmetric well. CONSTITUTION: A plurality of isolating layers(25a) having a constant interval are formed on a semiconductor substrate(21). Nitrogen ions are implanted into the semiconductor substrate in a region where an analog device and an electrostatic discharge(ESD) protection circuit are to be formed, to form a nitrogen impurity region(27). Impurity ions are selectively implanted into the semiconductor substrate to form the first and second conductive well regions in the surface of the semiconductor substrate between the isolating layers.
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