| 摘要 |
PURPOSE:To improve forward current/voltage characteristics and inverse breakdown voltage characteristics of a Schottky barrier diode. CONSTITUTION:An n<-> type GaAs layer 3 formed on an n<+> type GaAs layer 2 is etched to form a protrusion 8. An ohmic contact metal film 4 is formed on the protrusion 8, and an insulating layer 9 is formed on a valley surface except the protrusion 8. A Schottky contact metal film 5 is formed on an entirety from above the film 4 and the layer 9. A Schottky electrode 6 is formed of the film 4 and the film 5. An ohmic electrode 7 is formed all over the lower surface of the layer 2. |
