发明名称 |
Menetelmä oksidikalvojen kasvattamiseksi |
摘要 |
Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporizable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporized, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times. |
申请公布号 |
FI19992616(A) |
申请公布日期 |
2001.06.04 |
申请号 |
FI19990002616 |
申请日期 |
1999.12.03 |
申请人 |
ASM MICROCHEMISTRY LTD, |
发明人 |
ARO,EEVA;HAUKKA,SUVI;TUOMINEN,MARKO |
分类号 |
C23C16/42;C23C16/40;C23C16/44;C23C16/455;C30B25/02;H01L21/316 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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