发明名称 |
METHOD FOR MANUFACTURING ALUMINUM NITRIDE THIN FILM HAVING IMPROVED SURFACE AND COMBINATION CHARACTERISTIC |
摘要 |
PURPOSE: A method for manufacturing an aluminum nitride thin film having an improved surface and combination characteristic is provided to improve a surface planarization at a low process temperature and a chemical and electrical characteristic of the thin film, by processing the aluminum nitride thin film deposited by a low temperature process while using microwave plasma. CONSTITUTION: An aluminum nitride thin film is deposited. A microwave plasma process as a subsequent process of the aluminum nitride thin film is carried out. One of nitrogen gas, hydrogen gas and ammonia gas is selected as chemical reaction gas used in the plasma process. |
申请公布号 |
KR20010045383(A) |
申请公布日期 |
2001.06.05 |
申请号 |
KR19990048652 |
申请日期 |
1999.11.04 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
CHO, MIN HUI;KANG, YUN SEON;KIM, HAE YEOL;LEE, JAE YEONG |
分类号 |
H01L21/321;C23C14/06;C23C14/58;C30B33/00;H01L21/203;H01L21/318;H01L41/22;H01L41/316 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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