| 摘要 |
PURPOSE: A triac device of a planar type is provided to control efficiently a bi-directional cutoff voltage of the triac device and at the same time, to minimize an entire size of the device. CONSTITUTION: A triac device comprises a lower electrode(116), a first through a fifth semiconductor layer(106,100,110,112,114), a device isolation region(104), an electric field limit ring(108) and an upper electrode(118). The first semiconductor layer(106) of p-type and the second semiconductor layer(100) of n-type are formed on the lower electrode(1116) sequentially. The third semiconductor layer(110) of p-type is formed into the second semiconductor layer(100) and the fourth semiconductor layer(112) of n-type is formed into the first semiconductor layer(106). The device isolation region(104) of p-type is formed at the first and the second semiconductor layer(106,110). The electric field limit ring(108) of p-type is formed into the second semiconductor layer(100) between the third semiconductor layer(110) and the device isolation region(104). The fifth semiconductor layer(114) of p-type is formed into the third semiconductor layer(110). The upper electrode(118) is connected the third and the fifth semiconductor layer.
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