SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a method for fabricating the same are provided to improve an insulating characteristic between a gate electrode and a storage node by using a groove of a gate line. CONSTITUTION: A gate oxide layer(17), a gate electrode(18), and a gate cap insulating layer(19) are laminated on a semiconductor substrate(11). A groove is formed on the semiconductor substrate(11) of both sides of the gate electrode(18). An upper edge portion of the hate electrode(18) has a curvature. A sidewall spacer(20) is formed along the both sides of the gate electrode(18). A contact area between the sidewall spacer(20) and the semiconductor substrate(11) is reduced since each upper edge portion of the gate electrode(18) and the gate cap insulating layer(19) has the curvature. Accordingly, a contact area between the semiconductor substrate(11) and a storage node formed on one side of the gate electrode(18) can be reduced.